This text is intended for the undergraduate engineering students in Electrical and Electronics Engineering, Electronics and Communication Engineering, and Electronics and Instrumentation Engineering, and those pursuing postgraduate courses in Applied Electronics and VLSI Design. With the electronic devices and chips becoming smaller and smaller, the sizes of circuits and transistors on the microchips are approaching atomic levels. And so, Very Large-Scale Integration (VLSI) Design refers to the process of placing hundreds of thousands of electronic components on a single chip which nearly all modern computer architectures employ, and this technology has assumed a significant role in todayas tech savvy world. This well-organized, up-to-date and compact text explains the basic concepts of MOS technology including the fabrication methods, MOS characteristic behaviour, and design processes for layouts, etc. in a crisp and easy-to-learn style. The latest and most advanced techniques for maximising performance, minimising power consumption, and achieving rapid design turnarounds are discussed with great skill by the authors. Key Features in Gives an in-depth analysis of MOS structure, device characteristics, modelling and MOS device fabrication techniques. in Provides detailed description of CMOS design of combinatorial, sequential and arithmetic circuits with emphasis on practical applications. in Offers an insight into the CMOS testing techniques for the design of VLSI circuits. in Gives a number of solved problems in VHDL and Verilog languages. in Provides a number of short answer questions to help the students during examinations.In the linear mode, an NMOS transistor acts as a voltage-controlled resistor, while in the saturation region, it behaves like a ... The NMOS inverter circuit, its transfer characteristics, the pull-up to pull-down ratio driven by another NMOS inverteranbsp;...
|Author||:||A. ALBERT RAJ, T. LATHA|
|Publisher||:||PHI Learning Pvt. Ltd. - 2008-10-21|