SISDEP a95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.C2/C, J = -DVC + vC in the equilibrium condition - - (D/m)V(Cm) F: force, AA ext: external chemical potential v: impurity average velocity, D:diffusion coeff, m: segregation coeff., y: activity coeff. ... 1 Wiring size (um) of process A, B and.
|Title||:||Simulation of Semiconductor Devices and Processes|
|Author||:||Heiner Ryssel, Peter Pichler|
|Publisher||:||Springer Science & Business Media - 2012-12-06|