This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different aevolutionary pathsa based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. aDisruptive pathsa are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.Samsung, the leading South Korean firm, entered the market in the mid 1980s with a 64 K DRAM, nearly two ... Because of the ultra-short product life of DRAM chips, continuous investments and reinvestments must be made to remain at the anbsp;...
|Title||:||Silicon Non-Volatile Memories|
|Author||:||Barbara de Salvo|
|Publisher||:||John Wiley & Sons - 2013-05-10|