Several experiments were carried out on this test structure. ... Values of metal-to- base contact resistance were 22.4 Ap 2.5 uft*cm2 for a base sheet resis- tance of 182 Ap 6 Q/ ai . ... This difference can be attributed, at least in part, to the geometry of the contact structure. ... 3, Run No. 2.2. The base is a diffused boron layer, nominally 1.7 ym deep. 7. PHOTOLITHOGRAPHY 7.1. In troducti on Failures in theanbsp;...
|Title||:||Semiconductor measurement technology quarterly report, July 1 to September 30, 1973|
|Author||:||W. Murray Bullis, United States. National Bureau of Standards, United States. Defense Nuclear Agency, United States. Defense Advanced Research Projects Agency|