The simulator has been applied to investigate the X-valley leakage in two published equivalent-design GaAs/AIGaAs mid-IR QCLs. The X-valley leakage current has been quantified and the dominant X-valley leakage mechanism has been identified for the first time. The X-valley leakage is shown to have very different effects on the performance of the two devices. Good agreement with experiment is obtained at both cryogenic and room temperatures.The dash-dotted red curves are the confined potentials in the GaAs layers, the dashed green ones in the GaAsP layers ... Material) 106 6.2 Schematic cross- section of the layers inside an active box and the conduction-band energy diagram foranbsp;...
|Title||:||Monte Carlo Simulation of Electron Dynamics in Quantum Cascade Lasers|
|Publisher||:||ProQuest - 2008|