700-800AdC = 1300-1500aquot;F. ability to produce a wide range of IllaV compounds and alloys. ... A schematic illustration of molecular-beam epitaxy applied to doped Gals, -AlxAs is shown in Fig ... Microslmclure Science: Heterosrruclures and Quantum Devices, 1994; M. A. Herman and H. Sitter, Molecular Beam Epitaxy. 1989; E. V. ... Almost all of the memories are a form of random-access memory (RAM), in which any storage location can be accessed in the same amount of time.
|Title||:||McGraw-Hill encyclopedia of science and technology|
|Author||:||Sybil P.. Parker|