Within a relatively short time span, the Internet has become a pervasive medium for communication, commerce and entertainment. This was made possible in part by the availability of optical telecommunication networks, providing ever increasing data bandwidth at decreasing cost. The continued growth of global bandwidth availability now depends on progress in optical transceiver technology. The integration of discrete optical components into photonic integrated circuits (PICs) promises to achieve a reduction in space and energy requirements. Its commercial feasibility is determined by the associated cost. This thesis explores the potential of a new low cost approach to photonic integration. It is based on a single epitaxial growth semiconductor process. The work focuses on the investigation of laser diodes based on this process. The defining feature of the proposed type of laser is the use of reflective slots etched into the waveguide ridge of the device. These waveguide slots are employed in a novel wavelength tunable laser diode. Integration of this device with a photo detector and a semiconductor optical amplifier is demonstrated. A single slot introduced into a Fabry-Perot cavity equally yields a single mode tunable laser by using an interference effect between two strongly coupled sub-cavities. The same effect is exploited in a distributed fashion in a novel proposed and implemented interleaved rear reflector laser. Evolutionary algorithm optimisation of the position of waveguide slots along the length of a waveguide allows the implementation of single frequency lasers without the need for cleaved facets. Due to their specific design, very short wavelength transition times can be achieved with the discussed wavelength tunable laser diodes. A new heterodyne method for time resolved analysis of fast laser wavelength switching is presented. It allows, for the first time, the direct measurement of dynamic side mode suppression ratio during wavelength switching.This thesis explores the potential of a new low cost approach to photonic integration. It is based on a single epitaxial growth semiconductor process. The work focuses on the investigation of laser diodes based on this process.
|Title||:||Laser Diodes for Photonic Integrated Circuits|
|Author||:||Jan Peter Engelstädter|