vg[V] vg[V] Figure 6: The drain current for Vd = 1.5V of the 0.5/xm device as measured, for the initial doping profile, and for the final doping ... A graphical user interface assists users during the inverse modeling experiment (Fig. ... Due to parallel computation the overall computation time is no longer a severe constraint for TCAD experiments of this kind. ... Knaipp, H. Kosina, R. Mlekus, V. Palankovski, M. Rottinger, G. Schrom, S. Selberherr, and M. Stockinger, MINIMOS-NT Usera#39;s Guide.
|Title||:||International Conference on Simulation of Semiconductor Processes and Devices|
|Author||:||IEEE Electron Devices Society. Tokyo Chapter|