This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.... Hiromi Nagahama b and Ryuji Takeda b Silicon Group, Toshiba Ceramics Co., Ltd. a30, Soya, Hadano, Kanagawa, 257-0031, Japan b6-861-5, Higashikou, Seirou, Kitakanbara-Gun, Niigata, 957-0197, Japan In the nanometer device era, anbsp;...
|Title||:||High Purity Silicon 9|
|Author||:||Cor L. Claeys|
|Publisher||:||The Electrochemical Society - 2006-01-01|