This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.However, some issues are the same, and this chapter deals with one of them, electrical breakdown, which is paramount for NV-RAMs, ... The step-by-step integration of this material in a full 16 Mb DRAM by Panasonic is shown in Fig. ... This step can involve yield problems due to plasma damage to the underlying circuitry.
|Author||:||James F. Scott|
|Publisher||:||Springer Science & Business Media - 2013-06-29|