Titanium silicide (TiSi2) islands have been formed by UHV deposition of titanium on atomically flat Si(100) and Si(111). Scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and a variant of current imaging tunneling spectroscopy (CITS) have been used to characterize single electron tunneling (SET) through the islands. SET is observed to occur in the islands and is evaluated based on the predictions of the orthodox model. The observation of SET suggests that the Schottky barrier could be effective in future SET-based electronic devices. SET was not observed as often as expected, however, suggesting that there is a mechanism limiting SET. Possible mechanisms for SET limiting are evaluated and it is concluded that SET is limited due to a combination of Schottky barrier lowering, a low resistance substrate, and Fermi level pinning by the non-passivated surface states of the silicon. These factors make SET in TiSi2 islands on silicon potentially too variable to be used in future devices unless the SET-limiting mechanism is resolved. J. Oh, Ph.D. dissertation, North Carolina State University, Raleigh, NC (2001) .  A. Ponder, private communication (2006).  Park Scientific Instruments, Usera#39;s Guide to Autoprobe VP2, Part I, Revision A (1997).  Park Scientificanbsp;...
|Title||:||Electrical Characterization of Transition Metal Silicide Nanostructures Using Variable Temperature Scanning Probe Microscopy|
|Author||:||Joseph Leo Tedesco|
|Publisher||:||ProQuest - 2007|