The wiring layer of the three-layer construction can be obtained in the following way. The polysilicon layer (541), (542) is formed over the whole surface by the vapor-phase chemical reaction method (CVD) to a thickness of about 1, 500 toanbsp;...
|Title||:||Dynamic semiconductor RAM structures|
|Author||:||A. Cardon, L. J. L. Fransen, European Patent Office|
|Publisher||:||Pergamon - 1984-04|