Dynamic semiconductor RAM structures

Dynamic semiconductor RAM structures

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The wiring layer of the three-layer construction can be obtained in the following way. The polysilicon layer (541), (542) is formed over the whole surface by the vapor-phase chemical reaction method (CVD) to a thickness of about 1, 500 toanbsp;...

Title:Dynamic semiconductor RAM structures
Author:A. Cardon, L. J. L. Fransen, European Patent Office
Publisher:Pergamon - 1984-04


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