Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.During his basic studies in Konstanz he pursued broad interests by choosing elective courses in Informatics, Chemistry, and Macroeconomics. ... He successfully completed his final exams in both Theoretical and Experimental Physics at Konstanz University, whereas he chose ... Tim continued his doctoral research at TU Berlin, where the scope of his research was broadened to the epitaxial realization ofanbsp;...
|Title||:||Design and Realization of Novel GaAs Based Laser Concepts|
|Author||:||Tim David Germann|
|Publisher||:||Springer Science & Business Media - 2013-02-26|