An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.nitride-based. microwave. HEMTs. Lester F. Eastman, V. Tilak, J. Smarta#39;aquot;, B. Greena#39;:, A. Vertiatchikh, N. Weimann1a#39;1, O. Ambachera#39;41, ... Research supported by ONR MURI contract NOOO 14-96-1-1223 monitored by Dr. John Zolper, and by GE/CRD. ... Initial problems with current slump, or DC-RF dispersion, were alleviated by covering the surface with PE-CVD Si, N4 ... yielding 160Ad temperature rise for 10 W/mm normalized heat dissipation in large periphery HEMTa#39;s with 50 um pitchanbsp;...
|Title||:||Compound Semiconductors 2001|
|Author||:||Y Arakawa, Y. Hirayama, K Kishino, H Yamaguchi|
|Publisher||:||CRC Press - 2002-09-30|