The devices described in aAdvanced MOS-Gated Thyristor Conceptsa are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5, 000-V, 10, 000-V and 15, 000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.Power Semiconductor Devices; PWS Publishing Company 1995; Solution Manual: Power Semiconductor Devices; PWS Publishing ... Silicon Carbide Power Devices, World Scientific Publishing Company 2006; Fundamentals of Power Semiconductor Devices, Springer ... Dr. Baliga is also the originator of the concept of merging Schottky and p-n junction physics to create a new family of power rectifiersanbsp;...
|Title||:||Advanced High Voltage Power Device Concepts|
|Author||:||B. Jayant Baliga|
|Publisher||:||Springer Science & Business Media - 2011-09-21|